EC6361 ELECTRONICS Lab Manual Download- EEE 3rd SEM Anna University

EC6361 ELECTRONICS Lab Manual

Anna University Regulation 2013 Electrical and Electronics Engineering (EEE) EC6361 Electro LAB Manual for all experiments is provided below. Download link for EEE 3rd SEM EC6361 ELECTRONICS Lab Manual is listed down for students to make perfect utilization and score maximum marks with our study materials.

Anna University Regulation 2013 Electrical and Electronics Engineering (EEE) 3rd SEM EC6361 Electro LAB-ELECTRONICS Lab Manual

CHARACTERISTICS OF PN JUNCTION DIODE

AIM:

To study the PN junction diode characteristics under Forward & Reverse bias conditions

THEORY:

A PN junction diode is a two terminal junction device. It conducts only in one direction (only on forward biasing).

FORWARD BIAS:

                    On forward biasing, initially no current flows due to barrier potential. As the applied potential exceeds the barrier potential the charge carriers gain sufficient energy to cross the potential barrier and hence enter the other region. The holes, which are majority carriers in the P-region, become minority carriers on entering the N-regions, and electrons, which are the majority carriers in the N-region, become minority carriers on entering the P-region. This injection of Minority carriers results in the current flow, opposite to the direction of electron movement.

REVERSE BIAS:

                On reverse biasing, the majority charge carriers are attracted towards the terminals due to the applied potential resulting in the widening of the depletion region. Since the charge carriers are pushed towards the terminals no current flows in the device due to majority charge carriers. There will be some current in the device due to the thermally generated minority carriers.

The generation of such carriers is independent of the applied potential and hence the current is constant for all increasing reverse potential. This current is referred to as Reverse Saturation Current (IO) and it increases with temperature. When the applied reverse voltage is increased beyond the certain limit, it results in breakdown. During breakdown, the diode current increases tremendously.

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