EC6601 VLSI 2marks-16marks
Anna University Regulation 2013 Electronic Communications Engineering (ECE) EC6601 VLSI 2marks & 16marks for all 5 units are provided below. Download link for ECE 6th SEM EC6601 VLSI DESIGN Short answers, Question Bank are listed down for students to make perfect utilization and score maximum marks with our study materials.
EC6601 VLSI DESIGN QUESTION BANK
UNIT 1 – MOS TRANSISTOR PRINCIPLE
- _ SSI (Small Scale Integration)
- _ MSI (Medium Scale Integration)
- _ LSI (Large Scale Integration)
- _ VLSI (Very Large Scale Integration)
2.Give the advantages of IC?
- _ Size is less
- _ High Speed
- _ Less Power Dissipation 3.Give the variety of Integrated Circuits?
- _ More Specialized Circuits
- _ Application Specific Integrated Circuits(ASICs) EC-2354 VLSI DESIGN
4.Give the basic process for IC fabrication
Assembly processing & Packaging
_ Crystal growth & doping _ Ingot trimming & grinding _ Ingot slicing
_ Wafer polishing & etching _ Wafer cleaning.
6.Different types of oxidation? Dry & Wet Oxidation
7.What is the transistors CMOS technology provides? n-type transistors & p-type transistors.
8.What are the different layers in MOS transistors? Drain , Source & Gate
9.What is Enhancement mode transistor?
The device that is normally cut-off with zero gate bias. 10. What is Depletion mode Device?
The Device that conduct with zero gate bias. 11.When the channel is said to be pinched –off?
If a large Vds is applied this voltage with deplete the Inversion layer .This Voltage effectively pinches off the channel near the drain.
EC6601 VLSI Unit 1 2marks & 16marks – Download Here
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Anna University 6th SEM ECE VLSI 2marks 16 marks
EC6601 VLSI DESIGN question bank free download
Anna University ECE VLSI short answers Regulation 2013
EC6601 2marks, VLSI Unit wise short answers – ECE 6th Semester