EC8353 EDC Question Papers, Electron Devices and Circuits Previous Year Question Papers – EEE 3rd SEM


EC8353 EDC Question Papers

Anna University Regulation 2017 EEE EC8353 EDC Question Papers for previous years are provided below. Previous Year Question Papers for EEE 3rd SEM EC8353 Electron Devices and Circuits, Engineering are listed down for students to make perfect utilization and score maximum marks with our study materials.

Anna University Regulation 2017 (EEE) 3rd SEM EC8353 EDC – Electron Devices and Circuits question paper

1.Draw the symbol of the following devices PN Diode, Zener Diode, LED, and UJT.
2.What is a rectifier? Name its types.
3.Predict the diffusion capacitance for a silicon diode with a 10 mA forward current, if the charge carrier transit time is 60ns.
4.How does the transition region width and contact potential across a PN junction vary with the applied bias voltage?
5.With suitable expression model transition capacitance and Diffusion capacitance?
6.Construct the LASER Diode and give its applications.
7.A full-wave rectifier uses two diodes, the internal resistance of each diode may be assumed constant at 20 Ω. The transformer R.M.S. secondary voltage from Centre tap to each end of secondary is 50 V and load resistance is 980 Ω. Evaluate : (i) The mean load current (ii) The R.M.S. value of load current
8.List out the factors on which barrier potential depends.
9.Discuss the effect of temperature on reverse saturation current of a diode.
10.Outline transformer utilization factor and state its value for HWR and FWR.

11.Compare and contrast between P-N junction diode and Zener diode.
12.Assess the terms Knee voltage (VC) and Breakdown voltage (VB).
13.Calculate the total power supplied to a 3½ digit LED display when it indicates 1999. A 5V supply is used and each LED has a 10 mA Current.
14.State the mathematical equation which relates voltage applied across the PN junction diode and current flowing through it and list the PN diode parameters.
15.Summarize the limiting values of PN Junction Diode.
16.A silicon diode has a saturation current of 7.5μA at room temperature. Estimate the saturation current at 400 ° K
17.Distinguish between Zener Breakdown and Avalanche Breakdown
18.Define Diode-resistance.
19.A Ge diode has a saturation current of 10μA at 300ᵒ K. Determine the saturation current at 400ᵒK.
20.Show the VI characteristics of Zener diode and Mention its applications.

EC8353 EDC Question Paper1– Download Here

EC8353 EDC Question Paper2– Download Here

EC8353 EDC Question Paper3– Download Here

EC8353 EDC Question Paper4– Download Here

EC8353 EDC Question Paper5– Download Here

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EC8353 Question Papers with answers, EDC previous year question bank – EEE 3rd Semester


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