EE6503 PE Important Questions
Anna University Regulation 2013 EEE EE6503 PE Important Questions with Answer Key for all 5 units are provided below. Download link for EEE 5th SEM EE6503 Power Electronics Answer Key is listed down for students to make perfect utilization and score maximum marks with our study materials.
DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING
QUESTION BANK
EE6503 POWER ELECTRONICS
III Yr/ V SEM
UNIT-I POWER SEMI-CONDUCTOR DEVICES
PART A
1. Why IGBT is very popular nowadays?
2. What are the different methods to turn on the thyristor?
3. What is the difference between power diode and signal diode?
4. IGBT is a voltage controlled device. Why?
5. Power MOSFET is a voltage controlled device. Why?
6. Power BJT is a current controlled device. Why?
7. What are the different types of power MOSFET?
8. How can a thyristor turned off?
9. Define latching current 10. Define holding current.
11. What is a snubber circuit?
12. What losses occur in a thyristor during working conditions?
13. Define hard-driving or over-driving.
14. Define circuit turn off time.
15. Why circuit turn off time should be greater than the thyristor turn-off time?
17. What is the turn-off time for converter grade SCRs and inverter grade SCRs?
18. What are the advantages of GTO over SCR?
19. What is meant by phase controlled rectifier?
20. Mention some of the applications of controlled rectifier.
PART- B
1. Explain the structure and operation of turn on and turn of characteristics of SCR
2. (i) Describe the any two methods of turn-on mechanism of SCR. (ii) Explain the turn off characteristics of SCR.
3. Discuss the transfer, output and switching characteristics of IGBT.
4. Explain the switching performance of BJT with relevant waveforms indicating clearly the turn on, turn off times and their components.
5. (i) Draw and explain the forward characteristics of SCR using two transistor model of SCR. (ii) Compare any six salient features of MOSFET with IGBT.
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