EE8552 PE Question Papers
Anna University Regulation 2017 EEE EE8552 PE Question Papers for previous years are provided below. Previous Year Question Papers for EEE 5th SEM EE8552 Power Electronics, Engineering are listed down for students to make perfect utilization and score maximum marks with our study materials.
Anna University Regulation 2017 (EEE) 5th SEM EE8552 PE – Power Electronics question paper
1.Define the term pinch off voltage of MOSFET.
2.List the advantages of GTO over SCR.
3.Examine the current commutation of SCR.
4.Name the limitation of high frequency operation of a power electronic device
5. Mention the advantages of ‘RC’ triggering over ‘r’ triggering.
6.Tabulate the various forced commutation techniques used to turn off SCR.
7.Distinguish between SCR and TRIAC.
8.Predict the secondary break down in BJT
9.Discuss reverse recovery time in diodes.
10.Summarize the conditions under which a transist or operates as a switch.
11.List any two advantages of TRIA Cover SCR.
12.Illustrate the need of snubber circuit.
13.Classify the types of diodes.
14.Compare the merits and demerits of IGBT and MOSFET
15.What is meant by commutation of SCR and list its types.
16.What are the advantages of GTO over SCR.
17.Define the pinch off voltage off MOSFET.
18.Why are IGBT becoming popular in PE based applications?
19.Draw TRIAC characteristics.
20.Why TRIAC is not popular as compared to SCR? Justify
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